Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
  Fiber Coupled Laser Diodes
  Receptacle Laser Diodes
  Light Source Modules
  InGaAs Photodiodes
(0.95~1.65um)

  InGaAs Photodiodes
(0.6~1.7um)

  InGaAs Photodiodes
(0.9~2.2um)

  InGaAs Photodiodes
(0.9~2.6um)

  InGaAs APD
  InGaAs Linear Image Sensor
  InGaAs Area Image Sensor
  Pigtailed InGaAs Photodiodes
  Pyroelectric Infrared Sensor
  NDIR Gas Sensor
  Infrared Thermopile Temperature Sensor
  Visible Light Sensor
  2um Pigtailed Photodiodes
  Pigtailed Si Photodiodes
  Receptacle Si Photodiodes
Spectrometers
Wafers
Services
       

Cooled Near-Infrared Linear Image Sensor with 1024X1 Pixels

Product Description: 

Precision Micro-Optics offers cooled near-infrared linear image sensor consisting of a linear InGaAs-detector array bonded to the p-on-n readout IC.

 

 

Product Features:

  • 1024X1 Pixels (12.5X12.5um or 12.5X250um)
  • 28-pin Metal DIP Package
  • Embedded Thermoelectric Cooler
  • Built-in Temperature Sensor
  • 0.9 μm – 1.7 μm Spectral Range
  • Minimum Pixel Operability > 99%
  • Quantum Efficiency > 70%
  • Snapshot ITR / IWR
  • 2 Outputs with up to 22 MHz Pixel Rate

Applications:

  • Shortwave-Infrared Imaging
  • Hyper- / Multi-Spectral Imaging
  • Semiconductor Inspection / Process Monitoring

SPECIFICATIONS (ITS = 20 ± 1ºC)(Readings from Integrated Temperature Sensor (ITS)):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Sensor Technology
    Planar InGaAs PIN

Actual Pixel Array
    1024 x 1

Pixel Pitch
    12.5
um
Pixel Size (S)
    12.5 X12.5
um
Pixel Size (M)
    12.5 X250
um
Spectral Response Range
λ
  900
  1700
nm
Dark Current (S)(*)
ID
VR = 0.5V
 
0.6
nA
Dark Current (M)(*)
ID
VR = 0.5V
 
1
nA
Quantum Efficiency * Fill Factor(*)
QEFF
λ = 1550nm
70

%
Response Nonuniformity(*)

At 50 % Full Well

5
%
Response Nonlinearity

15 % – 85 % Well Occupation Range

2
%
Charge Capacity
(16 settings)


Cint = 6.4 fF

25
  μV/e-
Cint = 16 fF

10
 
Cint = 30 fF

5.3
 
Cint = 120 fF

1.3
 
Cint = 2.1 pF

0.076
 
Readout Noise
(ROIC Specifications )


Cint = 6.4 fF

1.2
  mV
Cint = 16 fF

0.8
 
Cint = 30 fF

0.6
 
Cint = 120 fF

0.5
 
Cint = 2.1 pF

0.25
 
Output Swing

Gain @16 fF (High Gain Mode)
2.0

V
Minimum Integration Period

 ROIC Specifications  5

μs
Maximum Pixel Rate

 ROIC Specifications  
22
MHz
Pixel Operability(*)
VBD
Percentage of Pixels with QEFF
Deviation ± 20%*(QEFF Mean)
99
  %
Chip Size
    15.3 x 9.0
mm
Package Type
    28-pin Metal DIP Package

Package Size L x W x T
    50.00 x 25.40 x 11.67
mm
Weight
    25.9
g

Note (*): These items are defined for central effective pixel array (1024x1). Their values correspond to default operation conditions.

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Operating Temperature
-40
  70
°C
  Storage Temperature
-40
  70
°C
  Power Consumption
    190
mW

 

Package Dimensions (mm) and Pin Definition:

  01
VDD_D
08
SDOUT_D 15
GND
22
SDIN_U
  02
RESET_D
09
DATVALID_D 16
VR1_U
23
CEB_U
  03
TEC+
10
VOUT_D 17
VR2_U
24
MC_U
  04
INT_D
11
VDDA_D 18
VTEMP_U
25
INT_U
  05
MC_D
12
VR2_D 19
VDDA_U
26
TEC-
  06
CEB_D
13
VR1_D 20
VOUT_U
27
RESET_U
  07
SDIN_D
14
VDETCOM 21
SDOUT_U
28
VDD_U

CHIP LAYOUT:

 

SPI Interface:

The Linear Image Sensor supports SPI protocol to set the command registers. There are functions of the gain mode, power consumption control and the sequence of pixel output. The 1024x1 photodiode array is connected to two 512x1 readout ICs.

 

Bias Input :

  Pin #
Bias
Voltage Current
Remark
  01, 28
VDD_D, VDD_U
1.8 V > 30 mA
Positive logic supply
  11, 19
VDDA_D, VDDA_U
3.6 V > 60 mA
Positive analog supply
  12, 17
VR2_D, VR2_U
0.3 V > 30 mA
External Input Bias
  13, 16
VR1_D, VR1_U
2.3 V > 5 mA
External Input Bias
  14
VDETCOM
> VR1_D&U
Detector common voltage
Detector bias = VDETCOM - VR1_D&U (*)
  15
GND
0V
Ground
  03
TEC+
0 V ~ 5.3 V < 2.2 A
Positive TEC supply
  26
TEC-
0 V
TEC ground
  02, 27
RESET_D, RESET_U
1.8 V
Chip reset

Note (*): VDETCOM lower than 2.3 V will forward bias the sensor, the exact zero bias voltage is device and temperature dependent.

Digital Pattern Input :

  Pin #
Clocks
Levels Rise/Fall
Remark
  04, 25
INT_D, INT_U
1.8 V / 0 V < 50 nS
Integration time
  05, 24
MC_D, MC_U
1.8 V / 0 V < 5 nS
Master clock, Max. Freq. = 22 MHz
  06, 23
CEB_D, CEB_U
1.8 V / 0 V < 10 nS
Chip enable(*)
  07, 22
SDIN_D, SDIN_U
1.8 V / 0 V < 5 nS
Data code input

Note (*): The input and output of all commands start after the falling edge of CEB.

Digital Pattern Output :

  Pin #
Clocks
Levels Rise/Fall
Remark
  08, 21
SDOUT_D, SDOUT_U
1.8 V / 0 V
Data code output
  09
DATVALID_D
1.8 V / 0 V
Valid data output flag signal

Analog Output :

  Pin #
Outputs
Levels Value
Remark
  10, 20
VOUT_D, VOUT_U
0.2 ~ 2.4 V
Video output
  18
VTEMP_U
2.138 V 27℃
Integrated Temperature Sensor (-0.6 mV /℃)

Figures :

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.